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2SC6017-E Bipolar (BJT) Transistor NPN 50V 10A 200MHz 950mW Through Hole TP
Price & Procurement
1,571 In Stock
Can ship immediately Factory Stock : 24,000
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.78000 $0.78
10 0.68700 $6.87
25 0.64560 $16.14
100 0.46850 $46.85
500 0.39142 $195.71
1,000 0.33312 $333.12
2,500 0.31230 $780.75
5,000 0.28107 $1,405.35

Submit a request for quotation on quantities greater than those displayed.

2SC6017-E

Datasheet
Digi-Key Part Number 2SC6017-EOS-ND
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Manufacturer

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Manufacturer Part Number 2SC6017-E
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Description TRANS NPN 50V 10A TP
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Detailed Description

Bipolar (BJT) Transistor NPN 50V 10A 200MHz 950mW Through Hole TP

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Documents & Media
Datasheets 2SA2169/2SC6017
Environmental Information Material Declaration 2SC6017-E
HTML Datasheet 2SA2169/2SC6017
Online Catalog NPN Transistors
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Packaging Bulk 
Part Status Not For New Designs
Transistor Type NPN
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 360mV @ 250mA, 5A
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
Power - Max 950mW
Frequency - Transition 200MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Base Part Number 2SC6017
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 500
Other Names 2SC6017-E-ND
2SC6017-EOS