IXTP18P10T IXYS | Discrete Semiconductor Products

Product Overview

Digi-Key Part Number	IXTP18P10T-ND	Copy
Quantity Available	1,906 Can ship immediately
Manufacturer	IXYS	Copy
Manufacturer Part Number	IXTP18P10T	Copy
Description	MOSFET P-CH 100V 18A TO-220	Copy
Manufacturer Standard Lead Time	24 Weeks
Detailed Description	P-Channel 100V 18A (Tc) 83W (Tc) Through Hole TO-220AB	Copy

Documents & Media

Datasheets	IXT(Y,A,P)18P10T
Online Catalog	P-Channel MOSFET (Metal Oxide)

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	IXYS
Series	TrenchP™
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	120 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	2100pF @ 25V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3