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Product Index > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXYS IXTP18P10T
IXTP18P10T IXYS | IXTP18P10T-ND DigiKey Electronics

IXTP18P10T P-Channel 100V 18A (Tc) 83W (Tc) Through Hole TO-220AB
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.05000 $2.05
50 1.65000 $82.50
100 1.48500 $148.50
500 1.15500 $577.50
1,000 0.95700 $957.00

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IXTP18P10T-ND
Copy   IXTP18P10T-ND
Quantity Available 1,062
Can ship immediately
Manufacturer

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Manufacturer Part Number

IXTP18P10T

Copy   IXTP18P10T
Description MOSFET P-CH 100V 18A TO-220
Copy   MOSFET P-CH 100V 18A TO-220
Manufacturer Standard Lead Time 24 Weeks
Detailed Description

P-Channel 100V 18A (Tc) 83W (Tc) Through Hole TO-220AB

Copy   P-Channel 100V 18A (Tc) 83W (Tc) Through Hole TO-220AB
Documents & Media
Datasheets IXT(Y,A,P)18P10T
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Series TrenchP™
Packaging ? Tube ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
California Prop 65
Warning Information
Frequently Bought Together
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Additional Resources
Standard Package ? 50

18:44:27 12/18/2018