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Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 6.96000 $6.96
30 5.70500 $171.15
120 5.14858 $617.83
510 4.31365 $2,199.96
1,020 3.75705 $3,832.19

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IXTH200N10T-ND
Copy   IXTH200N10T-ND
Quantity Available 5,315
Can ship immediately
Manufacturer

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Manufacturer Part Number

IXTH200N10T

Copy   IXTH200N10T
Description MOSFET N-CH 100V 200A TO-247
Copy   MOSFET N-CH 100V 200A TO-247
Manufacturer Standard Lead Time 24 Weeks
Detailed Description

N-Channel 100V 200A (Tc) 550W (Tc) Through Hole TO-247 (IXTH)

Copy   N-Channel 100V 200A (Tc) 550W (Tc) Through Hole TO-247 (IXTH)
Documents & Media
Datasheets IXT(H,Q)200N10T
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer IXYS
Series TrenchMV™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
FET Feature -
Power Dissipation (Max) 550W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
California Prop 65
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Additional Resources
Standard Package ? 30

07:44:39 10/16/2018