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IXTA3N120HV N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263
Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 6.16000 $6.16
50 4.95000 $247.50
100 4.51000 $451.00
500 3.65200 $1,826.00
1,000 3.08000 $3,080.00

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IXTA3N120HV-ND
Copy   IXTA3N120HV-ND
Quantity Available 167
Can ship immediately

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Manufacturer Part Number


Copy   IXTA3N120HV
Description MOSFET N-CH 1.2KV 3A TO263
Copy   MOSFET N-CH 1.2KV 3A TO263
Manufacturer Standard Lead Time 24 Weeks
Detailed Description

N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263

Copy   N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263
Documents & Media
Datasheets IXTA3N120HV
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer IXYS
Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
California Prop 65
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Additional Resources
Standard Package ? 50

11:30:53 1/17/2019