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IXFP12N65X2 N-Channel 650V 12A (Tc) 180W (Tc) Through Hole TO-220AB
Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
50 2.25000 $112.50

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Product Overview
Digi-Key Part Number IXFP12N65X2-ND
Copy   IXFP12N65X2-ND
Quantity Available 0

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Manufacturer Part Number


Copy   IXFP12N65X2
Description MOSFET N-CH
Manufacturer Standard Lead Time 24 Weeks
Detailed Description

N-Channel 650V 12A (Tc) 180W (Tc) Through Hole TO-220AB

Copy   N-Channel 650V 12A (Tc) 180W (Tc) Through Hole TO-220AB
Documents & Media
Datasheets IXF(A,P,H)12N65X2
Product Attributes Select All
Manufacturer IXYS
Series HiPerFET™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 310 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1134pF @ 25V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Environmental & Export Classifications
California Prop 65
Frequently Bought Together
Additional Resources
Standard Package ? 50

05:12:40 1/20/2019