IRLIZ44NPBF Infineon Technologies | Discrete Semiconductor Products

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IRLIZ44NPBF N-Channel 55V 30A (Tc) 45W (Tc) Through Hole TO-220AB Full-Pak

Product Overview

Digi-Key Part Number	IRLIZ44NPBF-ND	Copy
Quantity Available	1,519 Can ship immediately
Manufacturer	Infineon Technologies	Copy
Manufacturer Part Number	IRLIZ44NPBF	Copy
Description	MOSFET N-CH 55V 30A TO220FP	Copy
Detailed Description	N-Channel 55V 30A (Tc) 45W (Tc) Through Hole TO-220AB Full-Pak	Copy

Documents & Media

Datasheets	IRLIZ44NPbF
Other Related Documents	Part Number Guide
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Design Resources	IRLIZ44NPBF Saber Model
Featured Product	Data Processing Systems
PCN Design/Specification	Alternate Mold Compound 02/Jul/2014 POD Datasheet Update 6/Apr/2017 POD Datasheet Rev 28/Apr/2017
PCN Assembly/Origin	Additional Assembly Site 23/Apr/2014 Warehouse Transfer 29/Jul/2015
PCN Packaging	Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 Barcode Label Update 24/Feb/2017 Mult Device Standard Label Chg 29/Sep/2017
Simulation Models	IRLIZ44NPBF Spice Model IRLIZ44N Spice Model IRLIZ44NPBF Saber Model
Online Catalog	N-Channel MOSFET (Metal Oxide)

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	22 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 5V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 25V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB Full-Pak
Package / Case	TO-220-3 Full Pack