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IRFP4668PBF N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC
Price & Procurement
41,986 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 5.95000 $5.95
10 5.37500 $53.75
25 5.12520 $128.13
100 4.25000 $425.00
250 4.00000 $1,000.00
500 3.75000 $1,875.00
1,000 3.37500 $3,375.00
2,500 3.25000 $8,125.00
5,000 3.07500 $15,375.00
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IRFP4668PBF

Datasheet
Digi-Key Part Number IRFP4668PBF-ND
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Manufacturer

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Manufacturer Part Number IRFP4668PBF
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Description MOSFET N-CH 200V 130A TO-247AC
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 241nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 10720pF @ 50V
FET Feature -
Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 25
Other Names AUXSNFP4668
AUXSNFP4668-ND
SP001572854