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IRFP3206PBF N-Channel 60V 120A (Tc) 280W (Tc) Through Hole TO-247AC
Price & Procurement
3,692 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 3.02000 $3.02
10 2.71400 $27.14
25 2.56560 $64.14
100 2.05240 $205.24
250 1.93836 $484.59
500 1.82432 $912.16
1,000 1.56207 $1,562.07
2,500 1.53927 $3,848.18
5,000 1.40245 $7,012.23

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IRFP3206PBF

Datasheet
Digi-Key Part Number IRFP3206PBF-ND
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Manufacturer

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Manufacturer Part Number IRFP3206PBF
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Description MOSFET N-CH 60V 120A TO-247AC
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 60V 120A (Tc) 280W (Tc) Through Hole TO-247AC

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Documents & Media
Datasheets IRFP3206PBF
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
PCN Assembly/Origin Mosfet Backend Wafer Processing 23/Oct/2013
Featured Product Data Processing Systems
PCN Packaging Mult Device Standard Label Chg 29/Sep/2017
Other Related Documents IR Part Numbering System
HTML Datasheet IRFP3206PBF
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6540pF @ 50V
FET Feature -
Power Dissipation (Max) 280W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 25
Other Names SP001578056