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IRFB4227PBF N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 3.52000 $3.52
10 3.16800 $31.68
100 2.63450 $263.45
500 2.17224 $1,086.12
1,000 1.86408 $1,864.08
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Product Overview
Digi-Key Part Number IRFB4227PBF-ND
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Quantity Available 5,213
Can ship immediately
Manufacturer

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Manufacturer Part Number

IRFB4227PBF

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Description MOSFET N-CH 200V 65A TO-220AB
Copy   MOSFET N-CH 200V 65A TO-220AB
Detailed Description

N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-220AB

Copy   N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 1,000
Other Names SP001565892

12:07:15 10/21/2018