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IRFB4227PBF N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Price & Procurement
2,950 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.65000 $2.65
10 2.38000 $23.80
25 2.25000 $56.25
100 1.80000 $180.00
250 1.70000 $425.00
500 1.60000 $800.00
1,000 1.37000 $1,370.00
2,500 1.35000 $3,375.00
5,000 1.23000 $6,150.00
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IRFB4227PBF

Datasheet
Digi-Key Part Number IRFB4227PBF-ND
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Manufacturer

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Manufacturer Part Number IRFB4227PBF
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Description MOSFET N-CH 200V 65A TO-220AB
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Detailed Description

N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRFB4227PbF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
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PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
PCN Packaging Barcode Label Update 24/Feb/2017
HTML Datasheet IRFB4227PbF
Simulation Models IRFB4227PBF Saber Model
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names SP001565892