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IRFB4110PBF N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 4.32000 $4.32
50 3.52440 $176.22
100 3.23350 $323.35
500 2.66616 $1,333.08
1,000 2.28793 $2,287.93
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Product Overview
Digi-Key Part Number IRFB4110PBF-ND
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Quantity Available 5,941
Can ship immediately
Manufacturer

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Manufacturer Part Number

IRFB4110PBF

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Description MOSFET N-CH 100V 120A TO-220AB
Copy   MOSFET N-CH 100V 120A TO-220AB
Detailed Description

N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB

Copy   N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 50V
FET Feature -
Power Dissipation (Max) 370W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 50
Other Names 64-0076PBF
64-0076PBF-ND
SP001570598

14:47:21 11/19/2018