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IRFB38N20DPBF N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.34000 $2.34
10 2.11800 $21.18
100 1.70160 $170.16
500 1.32344 $661.72
1,000 1.09656 $1,096.56

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IRFB38N20DPBF-ND
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Quantity Available 1,872
Can ship immediately
Manufacturer

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Manufacturer Part Number

IRFB38N20DPBF

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Description MOSFET N-CH 200V 43A TO-220AB
Copy   MOSFET N-CH 200V 43A TO-220AB
Detailed Description

N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB

Copy   N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 54 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 1,000
Other Names *IRFB38N20DPBF
SP001556010

05:44:01 1/17/2019