IRFB3307ZPBF Infineon Technologies | Discrete Semiconductor Products

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Product Overview

Digi-Key Part Number	IRFB3307ZPBF-ND	Copy
Quantity Available	891 Can ship immediately
Manufacturer	Infineon Technologies	Copy
Manufacturer Part Number	IRFB3307ZPBF	Copy
Description	MOSFET N-CH 75V 120A TO-220AB	Copy
Manufacturer Standard Lead Time	26 Weeks
Detailed Description	N-Channel 75V 120A (Tc) 230W (Tc) Through Hole TO-220AB	Copy

Documents & Media

Datasheets	IRF(B/S/SL)3307ZPbF
Other Related Documents	Part Number Guide
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product	Data Processing Systems
PCN Assembly/Origin	Mosfet Backend Wafer Processing 23/Oct/2013 Qualification Wafer Source 01/Apr/2014 Warehouse Transfer 29/Jul/2015 TO220/247 Fab Site Transfer 19/May/2016
PCN Packaging	Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 Barcode Label Update 24/Feb/2017 Mult Device Standard Label Chg 29/Sep/2017
Simulation Models	IRFB3307ZPBF Saber Model IRFB3307ZPBF Spice Model
Online Catalog	N-Channel MOSFET (Metal Oxide)

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.8 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4750pF @ 50V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3