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Product Index > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > Infineon Technologies IRFB3307ZPBF
IRFB3307ZPBF Infineon Technologies | IRFB3307ZPBF-ND DigiKey Electronics

IRFB3307ZPBF N-Channel 75V 120A (Tc) 230W (Tc) Through Hole TO-220AB
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.65000 $2.65
50 2.16840 $108.42
100 1.96540 $196.54
500 1.55980 $779.90
1,000 1.31644 $1,316.44
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Product Overview
Digi-Key Part Number IRFB3307ZPBF-ND
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Quantity Available 1,519
Can ship immediately
Manufacturer

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Manufacturer Part Number

IRFB3307ZPBF

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Description MOSFET N-CH 75V 120A TO-220AB
Copy   MOSFET N-CH 75V 120A TO-220AB
Detailed Description

N-Channel 75V 120A (Tc) 230W (Tc) Through Hole TO-220AB

Copy   N-Channel 75V 120A (Tc) 230W (Tc) Through Hole TO-220AB
Documents & Media
Datasheets IRF(B/S/SL)3307ZPbF
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Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.8 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 50V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 50
Other Names SP001564038

02:43:57 12/10/2018