Add To Favorites
Product Overview
Digi-Key Part Number IRF640NLPBF-ND
Quantity Available 1,476
Can ship immediately
Manufacturer

Manufacturer Part Number

IRF640NLPBF

Description MOSFET N-CH 200V 18A TO-262
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-262

Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 150 mOhm @ 11A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
 
You May Also Be Interested In
Additional Resources
Standard Package ? 1,000
Other Names *IRF640NLPBF
SP001563296

05:57:41 4/24/2018

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.03000 $2.03
10 1.83500 $18.35
100 1.47490 $147.49
500 1.14712 $573.56
1,000 0.95048 $950.48

Submit a request for quotation on quantities greater than those displayed.

Send Feedback