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IRF640NLPBF N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-262
Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 2.05000 $2.05
10 1.86400 $18.64
100 1.51910 $151.91
500 1.20556 $602.78
1,000 1.01745 $1,017.45
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Product Overview
Digi-Key Part Number IRF640NLPBF-ND
Quantity Available 1,818
Can ship immediately

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Manufacturer Part Number


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Description MOSFET N-CH 200V 18A TO-262
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Detailed Description

N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-262

Copy   N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-262
Product Attributes Select All
Manufacturer Infineon Technologies
Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1,000
Other Names *IRF640NLPBF

22:50:35 12/10/2018