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IRF530NPBF N-Channel 100V 17A (Tc) 70W (Tc) Through Hole TO-220AB
Price & Procurement
6,204 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.83000 $0.83
10 0.73800 $7.38
25 0.70000 $17.50
100 0.52500 $52.50
250 0.52000 $130.00
500 0.44500 $222.50
1,000 0.36250 $362.50
2,500 0.35750 $893.75
5,000 0.32500 $1,625.00
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IRF530NPBF

Datasheet
Digi-Key Part Number IRF530NPBF-ND
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Manufacturer

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Manufacturer Part Number IRF530NPBF
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Description MOSFET N-CH 100V 17A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 100V 17A (Tc) 70W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRF530NPbF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
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PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
HTML Datasheet IRF530NPbF
Simulation Models IRF530NPBF Saber Model
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
FET Feature -
Power Dissipation (Max) 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF530NPBF
SP001570120