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IRF1010NSTRLPBF N-Channel 55V 85A (Tc) 180W (Tc) Surface Mount D2PAK
Price & Procurement
2,109 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.55000 $1.55
10 1.39100 $13.91
25 1.31240 $32.81
100 1.02380 $102.38
250 0.99752 $249.38
Import Tariff may apply to this part if shipping to the United States

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : IRF1010NSTRLPBFTR-ND
  • Minimum Quantity: 800
  • Quantity Available: 1,600 - Immediate
  • Unit Price: $0.86625
  • Digi-Reel®  : IRF1010NSTRLPBFDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 2,109 - Immediate
  • Unit Price: Digi-Reel®
  • Tape & Reel (TR)  : IRF1010NSTRRPBF-ND
  • Minimum Quantity: 800  Non-Stock 
  • Quantity Available: 0
  • Unit Price: $0.86625

IRF1010NSTRLPBF

Datasheet
Digi-Key Part Number IRF1010NSTRLPBFCT-ND
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Manufacturer

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Manufacturer Part Number IRF1010NSTRLPBF
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Description MOSFET N-CH 55V 85A D2PAK
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 55V 85A (Tc) 180W (Tc) Surface Mount D2PAK

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IRF1010NSTRLPBFCT