Add To Favorites
Product Overview
Digi-Key Part Number IPW65R110CFD-ND
Quantity Available 445
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 650V 31.2A TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3

Documents & Media
Datasheets IPx65R110CFD
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
FET Feature -
Power Dissipation (Max) 277.8W (Tc)
Rds On (Max) @ Id, Vgs 110 mOhm @ 12.7A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
For Use With
You May Also Be Interested In
Additional Resources
Standard Package ? 240
Other Names IPW65R110CFDFKSA1

12:25:09 3/19/2018

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 7.24000 $7.24
10 6.46700 $64.67
100 5.30310 $530.31
500 4.29420 $2,147.10
1,000 3.62162 $3,621.62

Submit a request for quotation on quantities greater than those displayed.

Send Feedback