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Product Overview
Digi-Key Part Number IPW65R041CFDFKSA1-ND
Quantity Available 626
Can ship immediately

Manufacturer Part Number


Description MOSFET N CH 650V 68.5A PG-TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 650V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3

Documents & Media
Datasheets IPW65R041CFD
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 100V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Rds On (Max) @ Id, Vgs 41 mOhm @ 33.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
For Use With
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Additional Resources
Standard Package ? 240
Other Names IPW65R041CFD

11:07:38 3/18/2018

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 12.78000 $12.78
10 11.62200 $116.22
100 9.87900 $987.90
500 8.42622 $4,213.11

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