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Product Overview
Digi-Key Part Number IPW65R019C7FKSA1-ND
Quantity Available 163
Can ship immediately
Manufacturer

Manufacturer Part Number

IPW65R019C7FKSA1

Description MOSFET N-CH 650V 75A TO247-3
Detailed Description

N-Channel 650V 75A (Tc) 446W (Tc) Through Hole PG-TO247-3

Documents & Media
Datasheets IPW65R019C7
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Wafer Process Update 28/Sep/2016
Simulation Models CoolMOS™ Power MOSFET 650V C7 Spice Model
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™ C7
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19 mOhm @ 58.3A, 10V
Vgs(th) (Max) @ Id 4V @ 2.92mA
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 400V
FET Feature -
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 240
Other Names SP000928646

02:25:40 8/14/2018

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 23.34000 $23.34
10 21.59200 $215.92
100 18.44110 $1,844.11

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