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IPS65R650CEAKMA1 N-Channel 700V 10.1A (Tc) 86W (Tc) Through Hole PG-TO251-3
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1,500 0.39744 $596.16

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IPS65R650CEAKMA1

Datasheet
Digi-Key Part Number IPS65R650CEAKMA1-ND
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Manufacturer

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Manufacturer Part Number IPS65R650CEAKMA1
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Description MOSFET N-CH 700V 10.1A IPAK
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 700V 10.1A (Tc) 86W (Tc) Through Hole PG-TO251-3

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Documents & Media
Datasheets IPS65R650CE
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1,500
Other Names SP001422888