Add To Favorites
IPS65R1K4C6AKMA1 N-Channel 650V 3.2A (Tc) 28W (Tc) Through Hole PG-TO251-3
Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 1.06000 $1.06
10 0.93600 $9.36
100 0.73950 $73.95
500 0.57350 $286.75
1,000 0.45276 $452.76

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPS65R1K4C6AKMA1-ND
Copy   IPS65R1K4C6AKMA1-ND
Quantity Available 1,597
Can ship immediately

Copy   PartSearchCore.DksusService3.PidVid
Manufacturer Part Number


Copy   IPS65R1K4C6AKMA1
Description MOSFET N-CH 650V 3.2A TO-251
Copy   MOSFET N-CH 650V 3.2A TO-251
Detailed Description

N-Channel 650V 3.2A (Tc) 28W (Tc) Through Hole PG-TO251-3

Copy   N-Channel 650V 3.2A (Tc) 28W (Tc) Through Hole PG-TO251-3
Documents & Media
Datasheets IPS65R1K4C6
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin DPAK/IPAK Dev Assembly Site Add 20/Jul/2017
Simulation Models CoolMOS™ Power MOSFET 650V C6 Spice Model
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Stub Leads, IPak
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 1,500
Other Names SP000991120

11:10:27 12/11/2018