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IPP80P03P4L04AKSA1 P-Channel 30V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.39000 $2.39
50 1.92420 $96.21
100 1.73180 $173.18
500 1.34692 $673.46
1,000 1.11602 $1,116.02

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPP80P03P4L04AKSA1-ND
Copy   IPP80P03P4L04AKSA1-ND
Quantity Available 1,223
Can ship immediately
Manufacturer

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Manufacturer Part Number

IPP80P03P4L04AKSA1

Copy   IPP80P03P4L04AKSA1
Description MOSFET P-CH 30V 80A TO220-3
Copy   MOSFET P-CH 30V 80A TO220-3
Detailed Description

P-Channel 30V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1

Copy   P-Channel 30V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1
Documents & Media
Datasheets IPx80P03P4L-04
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Wafer Test Add 27/Apr/2017
Simulation Models OptiMOS-P2-Spice Model
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Tube ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Vgs (Max) +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 11300pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 50
Other Names IPP80P03P4L-04
IPP80P03P4L-04-ND
SP000396390

08:02:58 12/19/2018