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IPP65R420CFDXKSA1 N-Channel 650V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO-220-3
Price & Procurement

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Price Break Unit Price Extended Price
500 1.20082 $600.41

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Product Overview
Digi-Key Part Number IPP65R420CFDXKSA1-ND
Quantity Available 0

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Manufacturer Part Number


Copy   IPP65R420CFDXKSA1
Description MOSFET N-CH 650V 8.7A TO220
Copy   MOSFET N-CH 650V 8.7A TO220
Detailed Description

N-Channel 650V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO-220-3

Copy   N-Channel 650V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO-220-3
Documents & Media
Datasheets IPx65R420CFD
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Site Add 20/Sep/2018
Simulation Models CoolMOS™ Power MOSFET 650V CFD2 Spice Model
Product Attributes Select All
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 100V
FET Feature -
Power Dissipation (Max) 83.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
Additional Resources
Standard Package ? 500
Other Names IPP65R420CFD

07:44:44 10/22/2018