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IPP65R190CFDAAKSA1 N-Channel 650V 17.5A (Tc) 151W (Tc) Through Hole PG-TO-220-3
Price & Procurement
 

Quantity
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Price Break Unit Price Extended Price
500 2.51550 $1,257.75

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Product Overview
Digi-Key Part Number IPP65R190CFDAAKSA1-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

IPP65R190CFDAAKSA1

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Description MOSFET N-CH 650V TO-220-3
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Detailed Description

N-Channel 650V 17.5A (Tc) 151W (Tc) Through Hole PG-TO-220-3

Copy   N-Channel 650V 17.5A (Tc) 151W (Tc) Through Hole PG-TO-220-3
Documents & Media
Datasheets IPx65R190CFDA
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Wafer Fab Site Addition 10/Jun/2016
Simulation Models CoolMOS™ Power MOSFET 650V CFDA Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 100V
FET Feature -
Power Dissipation (Max) 151W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 500
Other Names SP000928266

12:38:48 12/16/2018