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IPP50N10S3L16AKSA1 N-Channel 100V 50A (Tc) 100W (Tc) Through Hole PG-TO220-3-1
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.72000 $1.72
10 1.55600 $15.56
100 1.25040 $125.04
500 0.97252 $486.26
1,000 0.80579 $805.79

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPP50N10S3L16AKSA1-ND
Copy   IPP50N10S3L16AKSA1-ND
Quantity Available 1,058
Can ship immediately
Manufacturer

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Manufacturer Part Number

IPP50N10S3L16AKSA1

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Description MOSFET N-CH 100V 50A TO220-3
Copy   MOSFET N-CH 100V 50A TO220-3
Detailed Description

N-Channel 100V 50A (Tc) 100W (Tc) Through Hole PG-TO220-3-1

Copy   N-Channel 100V 50A (Tc) 100W (Tc) Through Hole PG-TO220-3-1
Documents & Media
Datasheets IPx50N10S3L-16
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Wafer Test Add 27/Apr/2017
Simulation Models OptiMOS-T-100V-Spice Model
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15.7 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4180pF @ 25V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 500
Other Names IPP50N10S3L-16
IPP50N10S3L-16-ND
IPP50N10S3L16
SP000407118

22:24:17 12/13/2018