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IPP320N20N3GXKSA1 N-Channel 200V 34A (Tc) 136W (Tc) Through Hole PG-TO-220-3
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 3.16000 $3.16
10 2.82200 $28.22
100 2.31360 $231.36
500 1.87348 $936.74
1,000 1.58004 $1,580.04

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPP320N20N3GXKSA1-ND
Copy   IPP320N20N3GXKSA1-ND
Quantity Available 261
Can ship immediately
Manufacturer

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Manufacturer Part Number

IPP320N20N3GXKSA1

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Description MOSFET N-CH 200V 34A TO220-3
Copy   MOSFET N-CH 200V 34A TO220-3
Detailed Description

N-Channel 200V 34A (Tc) 136W (Tc) Through Hole PG-TO-220-3

Copy   N-Channel 200V 34A (Tc) 136W (Tc) Through Hole PG-TO-220-3
Documents & Media
Datasheets IPx320N20N3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
Simulation Models OptiMOS™ Power MOSFET 200V N-Channel Spice Model
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32 mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 500
Other Names IPP320N20N3 G
IPP320N20N3 G-ND
IPP320N20N3G
SP000677842

21:51:23 10/23/2018