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IPP120P04P4L03AKSA1 P-Channel 40V 120A (Tc) 136W (Tc) Through Hole PG-TO220-3-1
Price & Procurement
7,444 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.87000 $2.87
10 2.57400 $25.74
100 1.89380 $189.38
500 1.60248 $801.24
1,000 1.35968 $1,359.68
2,500 1.34026 $3,350.64
5,000 1.24314 $6,215.68

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IPP120P04P4L03AKSA1

Datasheet
Digi-Key Part Number IPP120P04P4L03AKSA1-ND
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Manufacturer

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Manufacturer Part Number IPP120P04P4L03AKSA1
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Description MOSFET P-CH 40V 120A TO220-3
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Detailed Description

P-Channel 40V 120A (Tc) 136W (Tc) Through Hole PG-TO220-3-1

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Documents & Media
Datasheets IPx120P04P4L-03
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev Design Chg 9/Oct/2019
PCN Assembly/Origin Wafer Test Add 27/Apr/2017
Simulation Models OptiMOS-P2-Spice Model
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Tube 
Part Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 340µA
Gate Charge (Qg) (Max) @ Vgs 234nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names SP000842300