Product Overview
Digi-Key Part Number IPI65R420CFDXKSA1-ND
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Manufacturer

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Manufacturer Part Number

IPI65R420CFDXKSA1

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Description MOSFET N-CH 650V 8.7A TO262
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Detailed Description

N-Channel 650V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO262-3

Copy   N-Channel 650V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO262-3
Documents & Media
Datasheets IPx65R420CFD
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Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging ? Tube ?
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 100V
FET Feature -
Power Dissipation (Max) 83.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 500
Other Names IPI65R420CFD
IPI65R420CFD-ND
SP000891702

09:27:16 10/21/2018