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Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 3.56000 $3.56
10 3.18100 $31.81
100 2.60860 $260.86
500 2.11232 $1,056.16
1,000 1.78147 $1,781.47

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Product Overview
Digi-Key Part Number IPI045N10N3GXKSA1-ND
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Quantity Available 213
Can ship immediately
Manufacturer

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Manufacturer Part Number

IPI045N10N3GXKSA1

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Description MOSFET N-CH 100V 100A TO262-3
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Detailed Description

N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3

Copy   N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
Documents & Media
Datasheets IPI045N10N3 G
Other Related Documents Part Number Guide
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PCN Assembly/Origin Mult Dev Subcontact Chg 21/Dec/2017
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Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 500
Other Names IPI045N10N3 G
IPI045N10N3 G-ND
IPI045N10N3G
SP000683068

07:35:46 10/16/2018