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IPD90R1K2C3ATMA1 N-Channel 900V 5.1A (Tc) 83W (Tc) Surface Mount PG-TO252-3
Product Overview
Digi-Key Part Number IPD90R1K2C3ATMA1CT-ND
Copy   IPD90R1K2C3ATMA1CT-ND
Quantity Available 30
Can ship immediately
Manufacturer

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Manufacturer Part Number

IPD90R1K2C3ATMA1

Copy   IPD90R1K2C3ATMA1
Description MOSFET N-CH 900V 5.1A TO-252
Copy   MOSFET N-CH 900V 5.1A TO-252
Detailed Description

N-Channel 900V 5.1A (Tc) 83W (Tc) Surface Mount PG-TO252-3

Copy   N-Channel 900V 5.1A (Tc) 83W (Tc) Surface Mount PG-TO252-3
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names IPD90R1K2C3ATMA1CT
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.02000 $2.02
10 1.79100 $17.91
100 1.41530 $141.53
500 1.09760 $548.80
1,000 0.86652 $866.52

Submit a request for quotation on quantities greater than those displayed.

Alternate Package | This part is also available in the following packaging:

12:08:55 9/23/2018