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IPD122N10N3GATMA1 N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3
Price & Procurement
10,956 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.20000 $1.20
10 1.06900 $10.69
25 1.01520 $25.38
100 0.76130 $76.13
250 0.75400 $188.50
500 0.64526 $322.63
1,000 0.52563 $525.63

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : IPD122N10N3GATMA1TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 10,000 - Immediate
  • Unit Price: $0.51838

IPD122N10N3GATMA1

Datasheet
Digi-Key Part Number IPD122N10N3GATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IPD122N10N3GATMA1
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Description MOSFET N-CH 100V 59A
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Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3

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Documents & Media
Datasheets IPD122N10N3G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Simulation Models MOSFET OptiMOS™ 100V N-Channel Spice Model
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 12.2mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPD122N10N3GATMA1CT