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IPB65R310CFDATMA1 N-Channel 650V 11.4A (Tc) 104.2W (Tc) Surface Mount D²PAK (TO-263AB)
Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 2.84000 $2.84
10 2.56900 $25.69
100 2.06440 $206.44
500 1.60562 $802.81

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Product Overview
Digi-Key Part Number IPB65R310CFDATMA1CT-ND
Quantity Available 1,000
Can ship immediately

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Manufacturer Part Number


Copy   IPB65R310CFDATMA1
Description MOSFET N-CH 650V 11.4A TO263
Copy   MOSFET N-CH 650V 11.4A TO263
Detailed Description

N-Channel 650V 11.4A (Tc) 104.2W (Tc) Surface Mount D²PAK (TO-263AB)

Copy   N-Channel 650V 11.4A (Tc) 104.2W (Tc) Surface Mount D²PAK (TO-263AB)
Documents & Media
Datasheets IPB65R310CFD
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Site Add 20/Sep/2018
Simulation Models CoolMOS™ Power MOSFET 650V CFD2 Spice Model
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 310 mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
FET Feature -
Power Dissipation (Max) 104.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names IPB65R310CFDATMA1CT
Alternate Package | This part is also available in the following packaging:

19:56:35 12/9/2018