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Product Overview
Digi-Key Part Number IPB049N08N5ATMA1-ND
Quantity Available 0
Manufacturer

Manufacturer Part Number

IPB049N08N5ATMA1

Description MOSFET N-CH 80V TO263-3
Detailed Description

N-Channel 80V 80A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263AB)

Documents & Media
Datasheets IPB049N08N5
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Chg 15/Jun/2018
Simulation Models MOSFET OptiMOS™ 80V N-Channel Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Tape & Reel (TR) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.9 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 66µA
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 40V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 1,000
Other Names SP001227052

23:47:58 8/17/2018

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1,000 1.29048 $1,290.48

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