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IPB017N10N5ATMA1 N-Channel 100V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 7.59000 $7.59
10 6.77900 $67.79
100 5.55860 $555.86
500 4.50110 $2,250.55

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPB017N10N5ATMA1CT-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

IPB017N10N5ATMA1

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Description MOSFET N-CH 100V 180A D2PAK-7
Copy   MOSFET N-CH 100V 180A D2PAK-7
Detailed Description

N-Channel 100V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7

Copy   N-Channel 100V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7
Documents & Media
Datasheets IPB017N10N5
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Chg 15/Jun/2018
Simulation Models MOSFET OptiMOS™ 100V N-Channel Spice Model
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 279µA
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 50V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names IPB017N10N5ATMA1CT
Alternate Package | This part is also available in the following packaging:

13:08:47 12/15/2018