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IPA037N08N3GXKSA1 N-Channel 80V 75A (Tc) 41W (Tc) Through Hole PG-TO220-FP
Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 3.98000 $3.98
10 3.55100 $35.51
100 2.91210 $291.21
500 2.35810 $1,179.05
1,000 1.98876 $1,988.76

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPA037N08N3GXKSA1-ND
Copy   IPA037N08N3GXKSA1-ND
Quantity Available 540
Can ship immediately

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Manufacturer Part Number


Copy   IPA037N08N3GXKSA1
Description MOSFET N-CH 80V 75A TO220-3
Copy   MOSFET N-CH 80V 75A TO220-3
Detailed Description

N-Channel 80V 75A (Tc) 41W (Tc) Through Hole PG-TO220-FP

Copy   N-Channel 80V 75A (Tc) 41W (Tc) Through Hole PG-TO220-FP
Documents & Media
Datasheets IPA037N08N3
Other Related Documents Part Number Guide
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PCN Assembly/Origin Fab/Test Site Transfer 28/May/2015
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Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8110pF @ 40V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
Additional Resources
Standard Package ? 500
Other Names IPA037N08N3 G
IPA037N08N3 G-ND

13:22:15 12/17/2018