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3,267 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 6.01000 $6.01
10 5.39900 $53.99
100 4.08360 $408.36
500 3.62988 $1,814.94
1,000 3.10809 $3,108.09

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Alternate Package

IAUT260N10S5N019ATMA1

Datasheet
Digi-Key Part Number IAUT260N10S5N019ATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IAUT260N10S5N019ATMA1
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Description 100V 260A 1.9MOHM TOLL
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Manufacturer Standard Lead Time 20 Weeks
Detailed Description

N-Channel 100V 260A (Tc) 300W (Tc) Surface Mount PG-HSOF-8-1

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Documents & Media
Datasheets IAUT260N10S5N019
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™-5
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 166nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11830pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IAUT260N10S5N019ATMA1CT
IAUT260N10S5N019CT
IAUT260N10S5N019CT-ND