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BSP298H6327XUSA1 N-Channel 400V 500mA (Ta) 1.8W (Ta) PG-SOT223-4
Product Overview
Digi-Key Part Number BSP298H6327XUSA1CT-ND
Copy   BSP298H6327XUSA1CT-ND
Quantity Available 3
Can ship immediately

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Manufacturer Part Number


Copy   BSP298H6327XUSA1
Description MOSFET N-CH 400V 500MA SOT-223
Copy   MOSFET N-CH 400V 500MA SOT-223
Detailed Description

N-Channel 400V 500mA (Ta) 1.8W (Ta) PG-SOT223-4

Copy   N-Channel 400V 500mA (Ta) 1.8W (Ta)  PG-SOT223-4
Product Attributes Select All
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
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Additional Resources
Standard Package ? 1
Other Names BSP298H6327XUSA1CT
Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 1.50000 $1.50
10 1.33100 $13.31
100 1.05200 $105.20
500 0.81584 $407.92

Submit a request for quotation on quantities greater than those displayed.

Alternate Package | This part is also available in the following packaging:

08:55:51 9/18/2018