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BSP149H6327XTSA1 N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Price & Procurement
12,830 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.13000 $1.13
10 1.00700 $10.07
25 0.95560 $23.89
100 0.71670 $71.67
250 0.70992 $177.48
500 0.60752 $303.76
Import Tariff may apply to this part if shipping to the United States

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : BSP149H6327XTSA1TR-ND
  • Minimum Quantity: 1,000
  • Quantity Available: 12,000 - Immediate
  • Unit Price: $0.49489
  • Digi-Reel®  : BSP149H6327XTSA1DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 12,830 - Immediate
  • Unit Price: Digi-Reel®

BSP149H6327XTSA1

Datasheet
Digi-Key Part Number BSP149H6327XTSA1CT-ND
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Manufacturer

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Manufacturer Part Number BSP149H6327XTSA1
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Description MOSFET N-CH 200V 660MA SOT-223
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Manufacturer Standard Lead Time 10 Weeks
Detailed Description

N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
FET Feature Depletion Mode
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names BSP149H6327XTSA1CT