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DMG7N65SJ3 N-Channel 650V 5.5A (Tc) 125W (Tc) Through Hole TO-251
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Price Break Unit Price Extended Price
75 0.96373 $72.28
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Product Overview
Digi-Key Part Number DMG7N65SJ3-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

DMG7N65SJ3

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Description MOSFET BVDSS: 501V 650V TO251
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Detailed Description

N-Channel 650V 5.5A (Tc) 125W (Tc) Through Hole TO-251

Copy   N-Channel 650V 5.5A (Tc) 125W (Tc) Through Hole TO-251
Documents & Media
Datasheets DMG7N65SJ3
Environmental Information RoHS, REACH Cert of Compliance
Product Attributes Select All
Categories
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 886pF @ 50V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3, IPak, Short Leads
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Contains lead / RoHS Compliant
Additional Resources
Standard Package ? 75

07:36:27 10/17/2018