DMG6602SVT-7 Diodes Incorporated | Discrete Semiconductor Products

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DMG6602SVT-7 Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23-6

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Product Overview

Digi-Key Part Number	DMG6602SVT-7DICT-ND	Copy
Quantity Available	0 This feature is temporarily unavailable. We are working diligently to get this fixed. Thank you for your patience.
Manufacturer	Diodes Incorporated	Copy
Manufacturer Part Number	DMG6602SVT-7	Copy
Description	MOSFET N/P-CH 30V TSOT23-6	Copy
Manufacturer Standard Lead Time	32 Weeks
Detailed Description	Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23-6	Copy

Documents & Media

Datasheets	DMG6602SVT
Environmental Information	RoHS, REACH Cert of Compliance
PCN Assembly/Origin	Assembly/Test Site Addition 01/Jun/2015
Online Catalog	N and P-Channel Logic Level Gate FETs

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.4A, 2.8A
Rds On (Max) @ Id, Vgs	60 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 15V
Power - Max	840mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	TSOT-23-6
Base Part Number	DMG6602