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ULN2803APG,CN Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP
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ULN2803APG,CN

Datasheet
Digi-Key Part Number ULN2803APGCN-ND
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Manufacturer

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Manufacturer Part Number ULN2803APG,CN
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Description TRANS 8NPN DARL 50V 0.5A 18DIP
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Detailed Description

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP

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Documents & Media
Datasheets ULN2803, ULN2804 APG, AFWG Datasheet
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Tube 
Part Status Obsolete
Transistor Type 8 NPN Darlington
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA, 2V
Power - Max 1.47W
Frequency - Transition -
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Through Hole
Package / Case 18-DIP (0.300", 7.62mm)
Supplier Device Package 18-DIP
Base Part Number ULN280*A
 
Environmental & Export Classifications
Lead Free Status Lead free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 800
Other Names ULN2803APG
ULN2803APG(5,M)
ULN2803APG(CNHZN)
ULN2803APG(CNHZN)-ND
ULN2803APG(O,M)
ULN2803APG(O,N,HZA
ULN2803APG(O,N,HZN
ULN2803APG(OM)
ULN2803APG(OM)-ND
ULN2803APG(ONHZA
ULN2803APG(ONHZA-ND
ULN2803APG(ONHZN
ULN2803APG(ONHZN-ND
ULN2803APG-ND
ULN2803APGCN
ULN2803APGONHZN