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NTD4906N-35G N-Channel 30V 10.3A (Ta), 54A (Tc) 1.38W (Ta), 37.5W (Tc) Through Hole I-PAK
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NTD4906N-35G

Datasheet
Digi-Key Part Number NTD4906N-35GOS-ND
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Manufacturer

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Manufacturer Part Number NTD4906N-35G
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Description MOSFET N-CH 30V 10.3A SGL IPAK
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Detailed Description

N-Channel 30V 10.3A (Ta), 54A (Tc) 1.38W (Ta), 37.5W (Tc) Through Hole I-PAK

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Documents & Media
Datasheets NTD4906N
PCN Obsolescence/ EOL 3Q2105 EOL 6/Nov/2015
PCN Assembly/Origin Qualification Multiple Devices 24/Sep/2013
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Packaging Tube 
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1932pF @ 15V
FET Feature -
Power Dissipation (Max) 1.38W (Ta), 37.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Stub Leads, IPak
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 75
Other Names NTD4906N-35G-ND
NTD4906N-35GOS
NTD4906N35G