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GA20JT12-263 1200V 45A (Tc) 282W (Tc) Surface Mount D2PAK (7-Lead)
Price & Procurement
138 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 35.01000 $35.01
10 32.28800 $322.88
25 30.83720 $770.93
100 27.20940 $2,720.94
500 23.21868 $11,609.34
1,000 22.85590 $22,855.90
2,500 22.31171 $55,779.27

Submit a request for quotation on quantities greater than those displayed.

GA20JT12-263

Datasheet
Digi-Key Part Number 1242-1189-ND
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Manufacturer

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Manufacturer Part Number GA20JT12-263
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Description TRANS SJT 1200V 45A
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

1200V 45A (Tc) 282W (Tc) Surface Mount D2PAK (7-Lead)

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Documents & Media
Datasheets GA20JT12-263
Online Catalog SiC (Silicon Carbide Junction Transistor)
Product Attributes
Type Description Select All
Categories
Manufacturer GeneSiC Semiconductor
Series -
Packaging Tube 
Part Status Active
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 60mOhm @ 20A
Vgs(th) (Max) @ Id -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 3091pF @ 800V
FET Feature -
Power Dissipation (Max) 282W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (7-Lead)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names 1242-1189
GA20JT12-247ISO
GA20JT12247ISO