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2N5551BU Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3
Price & Procurement
10,965 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.28000 $0.28
10 0.22800 $2.28
100 0.09330 $9.33
500 0.07780 $38.90
1,000 0.05406 $54.06
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2N5551BU

Datasheet
Digi-Key Part Number 2N5551BU-ND
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Manufacturer

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Manufacturer Part Number 2N5551BU
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Description TRANS NPN 160V 0.6A TO-92
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Manufacturer Standard Lead Time 7 Weeks
Detailed Description

Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3

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Documents & Media
Datasheets 2N5551 - MMBT5551
Environmental Information Material Declaration 2N5551BU
PCN Design/Specification Copper Lead Frame 12/Oct/2007
Logo 17/Aug/2017
PCN Packaging Mult Devices 24/Oct/2017
Online Catalog NPN Transistors
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Packaging Bulk 
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 625mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Base Part Number 2N5551
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 10,000