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IPP80P03P4L04AKSA1 P-Channel 30V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1
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Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.46000 $2.46
10 2.21400 $22.14
25 2.08880 $52.22
100 1.77980 $177.98
500 1.46228 $731.14
1,000 1.27155 $1,271.55

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IPP80P03P4L04AKSA1

Datasheet
Digi-Key Part Number IPP80P03P4L04AKSA1-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPP80P03P4L04AKSA1
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Description MOSFET P-CH 30V 80A TO220-3
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Detailed Description

P-Channel 30V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1

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Customer Reference
Documents & Media
Datasheets IPx80P03P4L-04
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev Design Chg 9/Oct/2019
Mult Dev DS Update 17/Apr/2020
PCN Assembly/Origin Wafer Test Add 27/Apr/2017
HTML Datasheet IPx80P03P4L-04
EDA / CAD Models IPP80P03P4L-04 by SnapEDA
Simulation Models OptiMOS-P2-Spice Model
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tube 
Part Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Vgs (Max) +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 11300pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Part Number IPP80P03
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names IPP80P03P4L-04
IPP80P03P4L-04-ND
SP000396390