2SA2169/2SC6017 Datasheet by ON Semiconductor

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Ordering number: EN8275A 0N fielnllmmiuctm'Q9 us us 55 f i j: 70 [ O 0y ‘ WW H: : ‘2 W , 2H “5 :j us " as us 12 rm IE-Ill m 23 23 \23\ 23\ He,
82212 TKIM/32505EA TSIM TB-00001269 No.8275-1/10
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
2SA2169/2SC6017
Bipolar Transistor
(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
Applications
Relay drivers, lamp drivers, motor drivers
Features
Adoption of MBIT processes Large current capacity
Low collector-to-emitter saturation voltage High-speed switching
Specifi cations ( ): 2SA2169
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--50)100 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)10 A
Collector Current (Pulse) ICP PW100μs (--)13 A
Continued on next page.
Package Dimensions unit : mm (typ) Package Dimensions
unit : mm (typ)
7518-003 7003-003
Ordering number : EN8275A
Product & Package Information
• Package : TP • Package : TP-FA
JEITA, JEDEC :
SC-64, TO-251
JEITA, JEDEC : S
C-63, TO-252
Minimum Packing Quantity
:
500 pcs./bag
Minimum Packing Quantity
:
700 pcs./reel
Marking Packing Type (TP-FA) : TL Electrical Connection
(TP, TP-FA)
TL
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6 0.5
2.3 2.3
7.07.5
1.6
0.8
5.5 1.5
1 : Base
2 : Collecto
r
3 : Emitter
4 : Collecto
r
TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5 1.5
0.8
0 to 0.2
1 : Base
2 : Collecto
r
3 : Emitter
4 : Collecto
r
TP-FA
2SA2169-E
2SC6017-E
2SA2169-TL-E
2SC6017-TL-E
A2169 C6017
LOT No.LOT No.
2,4
3
1
2SC6017
2,4
3
1
2SA2169
: l l
2SA2169 / 2SC6017
No.8275-2/10
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
Base Current IB(--)2 A
Collector Dissipation PC
0.95 W
Tc=25°C20W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)10 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)10 μA
DC Current Gain hFE VCE=(--)2V, IC=(--)1A 200 (560)700
Gain-Bandwidth Product fTVCE=(--)5V, IC=(--)1A (130)200 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (90)60 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)250mA
(--290)180 (--580)360
mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)5A, IB=(--)250mA (--)0.93 (--)1.4 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)100μA, IE=0A
(--50)100
V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE= (--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)100μA, IC=0A (--)6 V
Turn-On Time ton
See specifi ed Test Circuit.
(70)40
ns
Storage Time tstg
(650)1000
ns
Fall Time tf(60)80 ns
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SA2169-E TP 500pcs./bag
Pb Free
2SC6017-E TP 500pcs./bag
2SA2169-TL-E TP-FA 700pcs./reel
2SC6017-TL-E TP-FA 700pcs./reel
VRRB
VCC=20VVBE= --5V
++
50Ω
INPUT
OUTPUT
RL
100μF 470μF
PW=20μs
IB1
D.C.1% IB2
IC=20IB1= --20IB2=3A
For PNP, the
p
olarit
y
is reversed.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
2SA2169 / 2SC6017
No.8275-3/10
6mA
--5.0
--3.0
--4.5
--4.0
--3.5
--2.0
--2.5
--1.0
--1.5
--0.5
5.0
3.0
4.5
4.0
3.5
2.0
2.5
1.0
1.5
0.5
0
--0.50 --1.0 --1.5 --2.0
IC -- VCE
--2mA
--6mA
--8mA
--10mA
IB=0
IT08961
0.50 1.0 1.5 2.0
0
IC -- VCE
IB=0
2mA
4mA
8mA
10mA
20mA
12mA
14mA
16mA
IT08962
2SA2169 2SC6017
--18mA
--16mA
18mA
--12mA
--4mA
--14mA
--20mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
--25
°
C
Ta=75
°
C
25
°
C
--25
°
C
1000
100
7
7
5
3
2
5
--0.01 325 --10--0.1
73257 3257
--1.0
hFE -- IC
2SA2169
VCE= --2V
1000
100
7
7
5
3
2
5
0.01 325 100.1
73257 3257
1.0
IT08965
hFE -- IC
IT08966
0
0
IC -- VBE
IT08964
Ta=75°
C
25
°
C
2SA2169
VCE= --2V
--1.0
--0.8
--0.6
--0.4
--0.2
1.0
0.8
0.6
0.4
0.2
0
0--0.2--0.1 --0.4--0. 3 --0.6--0. 5 --0.8 --1.0--0.7 --0.9 0.20.1 0.40.3 0.60.5 0.8 1.00.7 0.9
IC -- VBE
IT08963
--25
°
C
Ta=75°
C
25
°
C
2SC6017
VCE=2V
Ta=75°C
25°C
--25°C
2SC6017
VCE=2V
Cob -- VCB
3
2
2
7
5
3
100
IT08968
2SC6017
f=1MHz
Cob -- VCB
5
3
2
7
5
3
100
37
--0.1 25 2
--1.0 3752375
--10 37
0.1 25 2
1.0 3752375
10
IT08967
2SA2169
f=1MHz
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Collector Current, IC -- A
DC Current Gain, hFE
Collector Current, IC -- A
DC Current Gain, hFE
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
_I/ » , , z/ , ’/,/ I / _._.._—/,// T4 725°C _’—;’;/ 4. I; .4. a, /’ d 75” 1' /,’
2SA2169 / 2SC6017
No.8275-4/10
fT -- IC
3
100
10
2
7
5
3
2
--0.01 2573--0.1 25732573
--1.0 --10
IT08969
2SA2169
VCE= --5V
fT -- IC
IT08970
2SC6017
VCE=5V
3
100
10
2
7
5
3
2
0.01 25730.1 25732573
1.0 10
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
VBE(sat) -- IC
3
--1.0
2
--0.01 --0.1 --10
Ta= --25°C
25
°
C
2
7
5
3
23 57 2 --1.0
357 2357
2SA2169
IC / IB=50
IT08975
2SC6017
IC / IB=50
VBE(sat) -- IC
IT08976
75°C
3
1.0
2
0.01 0.1 10
Ta= --25°C
25
°
C
2
7
5
3
23 57 2 1.0
357 2357
75°C
--0.01 --0.1
23 57 23 57 23 57
--1.0 --10
7
5
3
2
7
5
3
2
7
5
3
2
--0.1
--1.0
--0.01
VCE(sat) -- IC
IT08973
Ta=75°C
25°C
--25°C
0.01 0.1
23 57 23 57 23 57
1.0 10
7
5
3
2
7
5
3
2
0.1
0.01
Ta=75
°
C
25
°
C
--25°C
2SA2169
IC / IB=50
VCE(sat) -- IC
IT08974
VCE(sat) -- IC
IT08972
2SC6017
IC / IB=20
--1.0
--0.1
2
3
5
7
2
3
5
7
--0.01
5
7
3
--0.01 --0.1
23 57 23 57 23 57
--1.0 --10
VCE(sat) -- IC
Ta=75°C
--25°C
IT08971
2SA2169
IC / IB=20
25°C
1.0
0.1
2
3
5
7
2
3
5
7
0.01
5
7
3
0.01 0.1
23 57 23 57 23 57
1.0 10
Ta=75
°
C
--25
°
C
25°C
2SC6017
IC / IB=50
Collector Current, IC -- A Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- A Collector Current, IC -- A
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SA2169 / 2SC6017
No.8275-5/10
0.01
1.0
7
5
3
2
7
5
3
2
0.1
3
10
5
7
3
2
2
IT09360
A S O
0.1 1.0 23 5723 57 2 753
10
2SA2169 / 2SC6017
Tc=25°C
Single Pulse
For PNP minus sign is omitted.
ICP=13A (PW100μs)
IC=10A
100
μ
s
500
μ
s
10μs
1ms
10ms
DC operation
100ms
0
0.2
0.4
0.6
0.8
1.0
0.95
0 20 40 60 80 100 120 140 160
PC -- Ta
IT09361
2SA2169 / 2SC6017
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
No heat sink
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W
0
PC -- Tc
IT09362
5
10
20
15
25
0 20 40 60 80 100 120 140 160
2SA2169 / 2SC6017
Collector Dissipation, PC -- W
Case Temperature, Tc -- °C
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2SA2169 / 2SC6017
No.8275-6/10
Taping Specifi cation
2SA2169-TL-E, 2SC6017-TL-E
um: um 1m 1 L Sm ‘ fl a “m u an: n n M] f I] m 7 1 L M 1 ¢ % fl m1“ m m “(I . “mm “Hum” .., y mu m M“ m“ _L
2SA2169 / 2SC6017
No.8275-7/10
Outline Drawing Land Pattern Example
2SA2169-TL-E, 2SC6017-TL-E
Mass (g) Unit
0.282
* For reference
mm Unit: mm
7.0
1.5
2.3
2.02.5
2.3
7.0
,Panklng Format Pukagcl’amc Maxlmlm Number nl devmes Lontalned (pcs‘; Bag Inn llax Outer box T? l: Ail AiZ 500 l0,000 50.000 30.000 Packlug formall’Dlmeuslons:mmlexlelnalH IDLE! box Outer box Bil Ail A’Z MEXZZEXES HOXZSDXEOU 470>
2SA2169 / 2SC6017
No.8275-8/10
Bag Packing Specifi cation
2SA2169-E, 2SC6017-E
Hm 11m max 2 w M ©1168}? nus-n2 w x x # W \ \ \ , Hm um; 51 Mm T 7 1 V n m :munu
2SA2169 / 2SC6017
No.8275-9/10
Outline Drawing
2SA2169-E, 2SC6017-E
Mass (g) Unit
0.315
* For reference
mm
2SA2169 / 2SC6017
PS No.8275-10/10
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