2SA2124 Datasheet by ON Semiconductor

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Ordering number : EN79203 0N Semlconductor” :] j; O o 25 40 i] o fl ‘flp M "U L‘UZLL H 0», , ‘57 so 707s
O1712 TKIM TC-00002827/80509 TKIM TC-00002048/D2004EA TSIM TB-00000072 No.7920-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
2SA2124
Bipolar Transistor
-30V, -2A, Low VCE(sat), PNP Single PCP
Applicaitons
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
Adoption of MBIT processes Low collector-to-emitter saturation voltage
Large current capacity High-speed switching
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --30 V
Collector-to-Emitter Voltage VCEO --30 V
Emitter-to-Base Voltage VEBO -- 6 V
Collector Current IC-- 2 A
Collector Current (Pulse) ICP -- 5 A
Continued on next page.
Package Dimensions
unit : mm (typ)
7007B-004
Ordering number : EN7920B
Product & Package Information
• Package : PCP
• JEITA, JEDEC : SC-62, SOT-89, TO-243
Minimum Packing Quantity
: 1,000 pcs./reel
Packing Type: TD Marking
Electrical Connection
TD
1 : Base
2 : Collecto
r
3 : Emitter
PCP
2.5
4.0
1.0
1.5
0.5
0.4
3.0
4.5
1.6
0.4
123
1.5
0.75
Top View
Bottom View
2SA2124-TD-E
AX
LOT No.
2
3
1
VR
2SA2124
No.7920-2/7
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
Base Current IB--400 mA
Collector Dissipation PC
When mounted on ceramic substrate (450mm2×0.8mm)
1.3 W
Tc=25°C 3.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=--30V, IE=0A --0.1 μA
Emitter Cutoff Current IEBO VEB=--4V, IC=0A --0.1 μA
DC Current Gain hFE1V
CE=--2V, IC=--100mA 200 560
hFE2V
CE=--2V, IC=--1.5A 65
Gain-Bandwidth Product fTVCE=--10V, IC=--300mA 440 MHz
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--1.5A, IB=--75mA --0.2 --0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=--1.5A, IB=--75mA --0.95 --1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10μA, IE=0A --30 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=--30 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10μA, IC=0A --6 V
Output Capacitance Cob VCB=--10V, f=1MHz 17 pF
Turn-ON Time ton See specifi ed Test Circuit.
45 ns
Storage Time tstg 200 ns
Fall Time tf23 ns
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SA2124-TD-E PCP 1,000pcs./reel Pb Free
VRRB
VCC= --12VVBE=5V
++
50Ω
INPUT
OUTPU
T
RL
220μF 470μF
PW=20μs
IB1
D.C.1%
IC
IB2
IC=20IB1= --20IB2= --0.5A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
2SA2124
No.7920-3/7
--2.0
--1.8
--1.6
--1.2
--1.4
--0.8
--1.0
--0.4
--0.6
--0.2
0
--0.40 --0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
IC -- VCE
IT07248
--10mA
--15mA
--20mA
--25mA
--40mA
IB=0mA
--5mA
--2mA
Ta=75°C
25
°
C
--25°C
VCE= --2V
--2.0
--1.0
--0.5
--1.5
0
0 --0.2 --0.4 --0.6 --0.8 --1.0
IC -- VBE
IT07249
--35mA
--30mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Cob -- VCB
5
3
2
10
7
--0.1 3725 3725 32
--1.0 --10 5
IT07252
f=1MHz
--0.1
2
3
5
7
2
3
5
--0.01
--0.01 --0.1
23 57 23 57 23 5
--1.0
VCE(sat) -- IC
Ta=75°C
--25°C
IT07253
IC / IB=20
25°C
IT07255
A S O
VBE(sat) -- IC
3
--1.0
3
--0.01 --0.1 --1.0
Ta= --25°C
25
°
C
75
°
C
2
7
5
23 57 23 523 57
IC / IB=20
IT07254
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
2
3
5
7
2
3
5
7
2
3
5
7
--1.0
--10
--0.1
--0.01
23 57
--0.1 --1.0 23 57
--10 23 5
100ms
DC operation
10ms
ICP= --5A
IC= --2A
1ms
Dissipation Limited
S / B Limited
100
μ
s
500
μ
s
<10μs
Tc=25°C
Single Pulse
Ta=75°C
25°C
--25
°
C
7
100
7
5
3
2
5
--0.01 325
--0.1
73257 23
--1.0
hFE -- IC
VCE= --2V
IT07250
fT -- IC
100
2
7
5
1000
7
5
3
--0.01 2573257323
--0.1 --1.0
IT07251
VCE= --10V
Collector Current, IC -- A
DC Current Gain, hFE
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- A
2SA2124
No.7920-4/7
0
1.4
0.6
0.8
1.0
1.2
1.3
0.4
0.2
2006040 80 100 140120 160
PC -- Ta
IT07256
Collector Dissipation, PC -- W
Ambient Temperature, Ta -- °C
Mounted on a ceramic board (450mm20.8mm)
PC -- Tc
Collector Dissipation, PC -- W
Case Temperature, Tc -- °C
4.0
0.5
0
160200
IT08355
40 60 80
1.0
1.5
2.0
2.5
3.0
3.5
100 120 140
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2SA2124
No.7920-5/7
Bag Packing Specifi cation
2SA2124-TD-E
1' 5m 1 7, m x \ am ‘ um x‘ m uinlnan
2SA2124
No.7920-6/7
Outline Drawing Land Pattern Example
2SA2124-TD-E
Mass (g) Unit
0.058
* For reference
mm Unit: mm
2.2
1.0
1.8
1.5
0.9
3.7
1.5
3.0
1.0
45° 45°
2SA2124
PS No.7920-7/7
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