BAW,SBAW56L Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 10 1Publication Order Number:
BAW56LT1/D
BAW56L, SBAW56L
Dual Switching Diode
Common Anode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage VR70 V
Forward Current IF200 mA
Forward Surge Current
(60 Hz @ 1 cycle) IFSM 2.0 A
Non−Repetitive Peak Forward Current
t = 1 ms (Note 3) IFSM 4.0 A
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 500 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to
+150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Square Wave; Tj = 25°C.
ANODE
3
CATHODE
1
2
CATHODE
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
A1 M G
G
SOT−23 (TO−236)
CASE 318
STYLE 12
A1 = Device Code
M = Date Code*
G= Pb−Free Package
BAW56LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BAW56LT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
SBAW56LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SBAW56LT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
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BAW56L, SBAW56L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage
(I(BR) = 100 mA) V(BR) 70 − V
Reverse Voltage Leakage Current
(VR = 25 V, TJ = 150°C)
(VR = 70 V)
(VR = 70 V, TJ = 150°C)
IR
30
2.5
50
mA
Diode Capacitance
(VR = 0 V, f = 1.0 MHz) CD 2.0 pF
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
715
855
1000
1250
mV
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1) RL = 100 W
trr 6.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
W
0.1 mF
D.U.T.
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAW56L, SBAW56L
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3
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
1.75
0
VR, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
0.75
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
TA = -40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (μA)
Curves Applicable to Each Cathode
0.001
tP, PULSE ON TIME (ms)
4
2
00.01 0.1 1 100
0
Figure 5. Forward Surge Current
10010
6
8
12
IFSM, FORWARD SURGE MAX CURRENT (A)
Based on square wave currents
TJ = 25°C prior to surge
10
_\ J%l;% SOLDERING FOOTPHINT‘ W 3%; A \
BAW56L, SBAW56L
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4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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P
UBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
BAW56LT1/D
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