BAT54SWT1 Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
April, 2019 Rev. 12
Publication Order Number:
BAT54SWT1/D
1
BAT54SW
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage 0.35 Volts (Typ) @ IF = 10 mAdc
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR30 V
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD200
1.6
mW
mW/°C
Forward Current (DC) IF200 mA
NonRepetitive Peak Forward Current
tp < 10 msec
IFSM 600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IFRM 300
mA
Junction Temperature TJ55 to 125 °C
Storage Temperature Range Tstg 55 to +150 °C
Electrostatic Discharge ESD HM < 8000
MM < 400
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
30 VOLT
DUAL SERIES SCHOTTKY
BARRIER DIODES
3
CATHODE/ANODE
1
ANODE
2
CATHODE
Device Package Shipping
ORDERING INFORMATION
BAT54SWT1G SOT323
(PbFree)
3,000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT323
CASE 419
STYLE 9
MARKING DIAGRAM
B8M G
G
B8 = Device Code
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
1
NSVBAT54SWT1G SOT323
(PbFree)
3,000 /
Tape & Reel
I; www.cnsemi.com
BAT54SW
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R 30 − −
V
Reverse Leakage
(VR = 25 V)
IR
0.5 2.0
mA
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF
0.22
0.29
0.35
0.41
0.52
0.24
0.32
0.40
0.5
0.8
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
7.6 10
pF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
5.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820 W
0.1 mF
DUT
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpT
10%
90%
IF
IR
trr T
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAT54SW
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3
TYPICAL CHARACTERISTICS
CT
, TOATAL CAPACITANCE (pF)
100
0.0 0.1
VF
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
510
15 20 25
0
VR, REVERSE VOLTAGE (VOLTS)
51015 30
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
40°C
25°C
TA = 150°C
0.6
55°C
150°C
125°C
100
1000
30
2520
IR, REVERSE CURRENT (mA)
IF
, FORWARD CURRENT (mA)
14
12
10
8
6
4
2
0
TA = 125°C
TA = 85°C
TA = 25°C
W V
BAT54SW
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4
PACKAGE DIMENSIONS
SOT323 (SC70)
CASE 41904
ISSUE N
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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BAT54SWT1/D
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