2SA,S2SA1774G Datasheet by ON Semiconductor

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0N Senlizmluluclorg www.0nsemi.com Ease Volrage Vlameeo -6.n Vdc H Collector Current - Conllnuous lo 400 mAdc THERMAL CHARACTERISTICS ‘B—E' Chamflerlstlc Symbol Max Unlt Power Dlssipallorl lNole I) PD lso mw Junclion Temperature n lso ”C Slorage Temperature Range 15.9 —55 ~ +150 °C Ilesses exceedlng Ihose ham “1 me Maxlmum Ramgs lahle may damage lne devlce. If any ol mese limils are exceeded, devlce lunclronalily should nol be assumed damage may occur and relrabillly may be aflected. l Devlce mounted on a FR-A glass epoxy pnnled circurl board uSlng me mlnlmum recommended footprlm. "For aodirlonal lnlormamn on our Ph-Free slraregy and soldenng details, please download lrle ON Semlconductor Soldenng and Mounling Techniques Reference Manual SDLDERRM/D. m Semmmauudrcamponemslndusmea LLszz l Pub February. 2019 — Rev. 10
© Semiconductor Components Industries, LLC, 2012
February, 2019 Rev. 10
1Publication Order Number:
2SA1774/D
2SA1774G, S2SA1774G
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SC75/SOT416/SC90
package which is designed for low power surface mount
applications, where board space is at a premium.
Features
Reduces Board Space
High hFE, 210460 (typical)
Low VCE(sat), < 0.5 V
Available in 8 mm, 7inch/3000 Unit Tape and Reel
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Collector Emitter Voltage V(BR)CBO 60 Vdc
Collector Base Voltage V(BR)CEO 50 Vdc
Emitter Base Voltage V(BR)EBO 6.0 Vdc
Collector Current Continuous IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation (Note 1) PD150 mW
Junction Temperature TJ150 °C
Storage Temperature Range Tstg 55 ~ +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR4 glass epoxy printed circuit board using the
minimum recommended footprint.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
MARKING DIAGRAM
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC75
CASE 463
STYLE 1
1
F9 = Device Code
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
F9 M G
G
Device Package Shipping
ORDERING INFORMATION
2SA1774G SC75
(PbFree)
3,000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2SA1774T1G SC75
(PbFree)
3,000/Tape & Reel
S2SA1774G SC75
(PbFree)
3,000/Tape & Reel
2SA1774G, S2SA1774G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Min Typ Max Unit
CollectorBase Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
60 − −
V
CollectorEmitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50 − −
V
EmitterBase Breakdown Voltage
(IE = 50 mAdc, IE = 0)
V(BR)EBO
6.0 − −
V
CollectorBase Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
− −0.5
mA
EmitterBase Cutoff Current
(VEB = 5.0 Vdc, IB = 0)
IEBO
− −0.5
mA
CollectorEmitter Saturation Voltage (Note 2)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
− −0.5
V
DC Current Gain (Note 2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
hFE
120 560
Transition Frequency
(VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
140
MHz
Output Capacitance
(VCB = 12 Vdc, IE = 0 Adc, f = 1 MHz)
COB
3.5
pF
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
-55‘C ‘11“
2SA1774G, S2SA1774G
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. CollectorEmitter Saturation Voltage
vs. Collector Current
1
0.1
0.01
0.1 1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOREMITTER
SATURATION VOLTAGE (V)
TA = 150°C
TA = 25°C
TA = 55°C
IC/IB = 10
Figure 2. BaseEmitter Saturation Voltage vs.
Collector Current
1.2
0.1 1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
TA = 55°C
IC/IB = 10
TA = 25°C
TA = 150°C
Figure 3. DC Current Gain vs. Collector
Current
1000
0.1 1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
TA = 150°C
TA = 25°C
TA = 55°C
VCE = 6 V
Figure 4. Saturation Region
2.0
IB, BASE CURRENT (mA)
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1 1.0 10 1000.01
IC = 100 mA
IC = 50 mA
IC = 30 mA
IC = 10 mA
TA = 25°C
Figure 5. BaseEmitter TurnON Voltage vs.
Collector Current
1
0.1 1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
VBE(ON), BASEEMITTER ON VOLT-
AGE (V)
TA = 150°C
TA = 25°C
TA = 55°C
VCE = 2 V
Figure 6. Capacitance
100
VR, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
0.1 1.0 10 100
10
1
Cibo
Cobo
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
100
10
2SA1774G, S2SA1774G
www.onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 7. Current Gain Bandwidth Product vs.
Collector Current
1000
IC, COLLECTOR CURRENT (mA)
ftau, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
0.1 1.0 10 100
VCE = 2 V
TA = 25°C
100
10
1000
Figure 8. Safe Operating Area
1000
VCE, COLLECTOR EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
1.0 10 100
10 ms
100 ms
1 ms
Thermal
Limit
Single Pulse Test at TA = 25°C
100
10
1
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2SA1774G, S2SA1774G
www.onsemi.com
5
PACKAGE DIMENSIONS
SC75/SOT416
CASE 463
ISSUE G
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
E
D
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.061 0.063 0.065
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.060 0.063 0.067
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
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