PMBFJ174-177 Datasheet by NXP USA Inc.

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DATA SHEET
Product specification April 1995
DISCRETE SEMICONDUCTORS
PMBFJ174 to 177
P-channel silicon field-effect
transistors
April 1995 2
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and
source connections.
PINNING
Note
1. Drain and source are
interchangeable.
Marking codes:
1 = drain
2 = source
3=gate
174 : p6X
175 : p6W
176 : p6S
177 : p6Y
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
gd
s
3
Top view
MAM386
QUICK REFERENCE DATA
Drain-source voltage VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate current IGmax. 50 mA
Total power dissipation
up to Tamb =25 CP
tot max. 300 mW
Drain current
VDS =15 V; V
GS =0
PMBFJ174 175 176 177
IDSS
20
135
7
70
2
35
1.5
20
mA
mA
Drain-source ON-resistance
VDS = 0.1 V; VGS =0 R
DS on 85 125 250 300
April 1995 3
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
Tj=25 C unless otherwise specified
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0.7 mm.
Drain-source voltage VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate-drain voltage VGDO max. 30 V
Gate current (d.c.) IGmax. 50 mA
Total power dissipation
up to Tamb =25 C(1) Ptot max. 300 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tjmax. 150 C
From junction to ambient in free air Rth j-a =430K/W
PMBFJ174 175 176 177
Gate cut-off current
VGS =20 V; V
DS =0 I
GSS 1111nA
Drain cut-off current
VDS = 15 V; VGS = 10 V IDSX 1111nA
Drain current
20
135
7
70
2
35
1.5
20
mA
mA
VDS = 15 V; VGS =0 IDSS
Gate-source breakdown voltage
IG=1 A; VDS =0 V
(BR)GSS 30 30 30 30 V
Gate-source cut-off voltage
5
10
3
6
1
4
0.8
2.25
V
V
ID= 10 nA; VDS =15 V VGS off
Drain-source ON-resistance
VDS = 0.1 V; VGS =0 R
DS on 85 125 250 300
April 1995 4
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DYNAMIC CHARACTERISTICS
Tj=25 C unless otherwise specified
Input capacitance, f = 1 MHz
VGS =10 V; V
DS =0 V C
is typ. 8 pF
VGS =V
DS =0 C
is typ. 30 pF
Feedback capacitance, f = 1 MHz
VGS =10 V; V
DS =0 V C
rs typ. 4 pF
Switching times (see Fig.2 3) PMBFJ174 175 176 177
Delay time tdtyp. 2 5 15 20 ns
Rise time trtyp. 5 10 20 25 ns
Turn-on time ton typ. 7 15 35 45 ns
Storage temperature tstyp. 5 10 15 20 ns
Fall time tftyp. 10 20 20 25 ns
Turn-off time toff typ. 15 30 35 45 ns
Test conditions: VDD 10 6 6 6 V
VGS off 12 8 6 3 V
RL560 1200 2000 2900
VGS on 000 0V
Fig.2 Switching times test circuit
handbook, halfpage
MBK292
RL
50 Ω
D.U.T
50 Ω
Vin
Vout
VDD
Fig.3 Input and output waveforms
tdtr=t
on
tstf=t
off
Rise time input voltage  1 ns
MBK293
VGSoff
INPUT
OUTPUT
ts
tf
90%
10%
10%
90%
10%
90%
td
tr
April 1995 5
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
April 1995 6
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
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removal or replacement of any products or rework
charges) whether or not such damages are based on tort
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Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
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of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
April 1995 7
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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other industrial or intellectual property rights.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Contact information
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© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/02/8 Date of release: April 1995

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